Half-chip technology has become a standard product of mainstream component companies due to the double improvement of component power and reliability and high mass production maturity.
Components are affected by differences, irradiation, shielding, and aging between batteries in actual applications, which may cause current mismatch in the components. The appearance of double-sided batteries has further made the problem of current mismatch relatively more serious.
In fact, when the short-circuit current of a monolithic battery changes, the maximum power point of the component will move. It is not that the short-circuit current of the monolithic battery decreases as much as the component power will be lost accordingly. In response to this phenomenon, we have established a circuit model. The power loss during the current mismatch between the whole chip and half chip was analyzed.
The model considered is as follows: 72-cell (or 144 half-cell) modules are irradiated with 1000W / m2, the Isc of one cell (or half-cell) in the module becomes 95% of the normal value, and the remaining cells are normal.
The electrical performance parameters of normal and half-cells with abnormal and Isc reduced by 5% are as follows:
Establish the component circuit model in the simulation software and bring the battery electrical parameters, you can get the influence of the single battery abnormality on the component power (as shown below),
The results show that after the single-cell Isc and Imp fell by 5%, the Imp of the whole module fell by 0.325%, the Imp of the half-chip module fell by 0.239%, and Vmp also increased slightly, resulting in power losses of 0.136% and 0.073%, respectively . The mismatch loss of the half-chip module is only about 1/2 of the whole-chip module. This is due to the parallel relationship between the upper and lower parts of the current general half-chip module version module. The change of the peak operating current in the lower half of the half-module No effect.
Therefore, even if there are several batteries with the short-circuit current reduced to 95% of the normal value in the lower half, the power loss ratio of the half-chip component will not change significantly, and the half-chip component has obvious advantages in resisting current mismatch compared with the whole chip.
Based on the introduction of the Hi-MO 3 half-chip double-sided module in 2018, Long used half-chip technology to cut the battery slice in half, halving the battery operating current, effectively reducing the packaging loss of the module, and increasing the average power of the module by 5-10W. At the same time, the double-sided technology is superimposed, and the double-sided rate of the component is greater than 75%. When shaded, Hi-MO 3 has a higher power generation capacity than the entire module array. In addition, Hi-MO 3 products also have the advantage of lower hot spot temperature, which brings a new choice for lower electricity costs.
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