Progress in the Research of CNT Thin Film Transistors Printed by Suzhou Nanometer Institute

Progress in the Research of CNT Thin Film Transistors Printed by Suzhou Nanometer Institute

a) Electrical properties of printed thin-film transistor devices, b) Photographs of carbon nanotube films in channels in AFM, c) Printed carbon nanotube inverter voltage output and gain curves, and d) Inverter voltage input and output curves at specific frequencies .

Printed electronic technology is an emerging technology and industrial field that has flourished in the international arena in the past five years. Printed electronic technology has become a cross-cutting and comprehensive frontier research hotspot today. The development of high-performance new-type printing electronic ink has become one of the most critical technologies in printed electronics technology.

Compared with other semiconductor materials, semiconducting carbon nanotubes have not only small size, excellent electrical properties, and good stability of physical and chemical properties, but also electronic components such as transistors constructed by carbon nanotubes have advantages of less heat generation, higher operating frequency, and the like. Nanotubes are easy to achieve solubilization. Separation and purification of semiconducting carbon nanotube printing inks can build high-performance printed carbon nanotube thin film transistor devices. Therefore, semiconducting carbon nanotubes are considered to be ideal for building high-performance printable thin film transistor devices. One of the semiconductor materials.

On the basis of the original work, the Printed Electronics Research Center of the Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences, has developed a variety of methods for the efficient and selective separation of semiconducting carbon nanotubes through chemical methods and selective coating of polymers, and has been constructed by modern printing techniques. Excellent performance of carbon nanotube thin film transistor devices (such as mobility and switching ratio can reach 40cm2/Vs and 107, respectively), fully printed flexible thin film transistor devices, inverters and other simple logic circuits. This lays a solid foundation for the application of carbon nanotube printed thin-film transistor devices in LED, OLED drive display and other fields.

Related research work has been published in Nanoscale (2013, 5, 4156-4161), Journal of Physical Chemistry C (2013, DOI: 10.1021/jp4055022 and 2011, 115, 6975-6979), Journal of Materials Chemistry (2012, 22, 2051). -2056 and 2012, 22, 20747–20753) and Science China Chemistry, (China Science: Chemistry, 2011, 54(9): 1484-1490.) and other academic journals, have applied for 4 patents (No201210102957.8, No201210098673 .6, No201210563804.3 and NO201310077635.7).

This study was supported by the Knowledge Innovation Project of the Chinese Academy of Sciences (KJCX2-EW-M02), the National Natural Science Foundation of China (No. 91123034, 61102046) and the Jiangsu Provincial Natural Science Foundation (No. BK2011364).

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